Abstract Silicon carbide (SiC) micro bullets were grown on a bio-carbon based charcoal substrate, the morphology and crystal structure were analyzed. In order to collect the crystallographic details scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM/TEM) and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) were used. For this a thin lamella from the SiC micro bullet was extracted by focused ion beam (FIB). Electron microscopy revealed that the SiC micro bullets had a high density of stacking faults along their growth direction. However, the size and morphology of the micro bullets were relatively homogeneous, despite the high stacking fault density, i.e. the growth was quite robust at the synthesis temperature (1750 °C). The findings open up to SiC ceramics from bio-carbon with anisotropic porosity for the development of novel light weight high temperature resistant materials.

中文翻译：

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生物碳基木炭基材上的 SiC 晶体微弹

摘要 在生物碳基木炭基体上生长碳化硅（SiC）微弹，对其形貌和晶体结构进行了分析。为了收集晶体学细节扫描电子显微镜 (SEM)，使用扫描透射电子显微镜 (STEM/TEM) 和高角度环形暗场扫描透射电子显微镜 (HAADF-STEM)。为此，通过聚焦离子束 (FIB) 提取了来自 SiC 微型子弹的薄薄片。电子显微镜显示，碳化硅微弹沿其生长方向具有高密度的堆垛层错。然而，尽管堆垛层错密度高，微型子弹的尺寸和形态相对均匀，即在合成温度（1750°C）下生长非常稳健。