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Enhancement of DC and Breakdown Performance on Single to Multi-Step Gate FP Using GaN-HEMT for High Power Applications
Silicon ( IF 3.4 ) Pub Date : 2020-05-28 , DOI: 10.1007/s12633-020-00503-4
D. Godfrey , D. Nirmal , D. Godwinraj , L. Arivazhagan , N. MohanKumar , Jerry Tzou , Wen-Kuan Yeh

AlGaN/GaN-HEMT with Single to Multi-step gate field plate is proposed in this work. The proposed device enhanced Drain current, breakdown voltage and shift in threshold voltage. The performance of proposed device is analyzed and compared with experimental step device with and without Field Plate (FP). Reduction of current collapse effects is proved with Multi Gate Step field Plate in AlGaN/GaN HEMTs. The performance of the devices is analyzed using Technological Computer Aided Design (TCAD). In the simulation, polarization, mobility, recombination and impact ionization models are used. The electric field, potential and current density of the GaN-HEMT are analyzed. From the TCAD simulation, GaN-HEMT with increment in-step FP yields higher breakdown voltage than that of other FP techniques. Hence, the proposed GaN-HEMT is an outstanding candidate for future high power application.



中文翻译:

使用GaN-HEMT的单级至多级栅极FP的DC和击穿性能增强,适用于大功率应用

这项工作提出了具有单步至多步栅场板的AlGaN / GaN-HEMT。所提出的器件增强了漏极电流,击穿电压和阈值电压的漂移。分析了所提出设备的性能,并将其与带有和不带有现场平板(FP)的实验步进设备进行了比较。通过在AlGaN / GaN HEMT中使用多栅阶跃场板证明了电流崩塌效应的降低。使用技术计算机辅助设计(TCAD)分析设备的性能。在仿真中,使用极化,迁移率,重组和碰撞电离模型。分析了GaN-HEMT的电场,电势和电流密度。通过TCAD仿真,具有逐步步进FP的GaN-HEMT产生的击穿电压高于其他FP技术。因此,

更新日期:2020-05-28
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