Thickness control of a semiconductor thin film in the multistack layer (MSL) deposition process is important for improving the reliability and the performance of devices based on 3-dimensional stacked layers. The “first wafer effect” refers to the phenomenon where the thickness and the map profile of the first prepared wafer differ from those of the wafer prepared via the continuous process when deposition is started after the plasma deposition process has not been conducted for a certain time. We adopted stack seasoning to eliminate the first wafer effect for the MSL thickness and substantially reduced the effect; we also propose a mechanism based on stable improvement of the environment inside the chamber. Another interesting result is that, in addition to ensuring the reproducibility of the variations in stack layer thickness among wafers, the individual thicknesses of stack layers in the first wafer are reliably improved.

中文翻译：

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使用等离子体增强化学气相沉积制备的多个 SiO2/SiN 堆叠层的第一晶片效应

多层堆叠 (MSL) 沉积工艺中半导体薄膜的厚度控制对于提高基于 3 维堆叠层的器件的可靠性和性能非常重要。“第一晶片效应”是指在等离子沉积工艺未进行一定时间后开始沉积时，首次制备的晶片的厚度和图谱与连续工艺制备的晶片不同的现象。 . 我们采用堆叠调味消除了MSL厚度的第一晶圆效应，并大幅降低了该效应；我们还提出了一种基于稳定改善室内环境的机制。另一个有趣的结果是，除了确保晶片之间堆叠层厚度变化的再现性之外，