This work investigates the thermoelectric and electrical performance of nanostructured thin films of antimony (Sb)-doped Bi₂Te₃ (thickness ∼ 60 nm) and Bi_0.5Sb_1.5Te₃ (thickness ∼ 60 nm). The films were deposited on a glass substrate by thermal evaporation under high vacuum conditions. The structure and morphology of the films was investigated by standard characterization techniques. X-ray diffraction was used to identify the formation of different phases during the synthesis of the films. The Van der Pauw and Harman methods were employed to measure the conductivity (σ) and figure of merit (ZT). Further, samples were subjected to annealing under a high vacuum at 200°C for 1 h to improve the quality and ZT of the deposited films. The Sb-doped Bi₂Te₃ film was found to be ∼ 6.5 times more conductive than the Bi_0.5Sb_1.5Te₃ film. However, the two films exhibited comparable ZT values owing to the small value of the Seebeck coefficient (S) of Sb. This study represents a significant contribution in the field of thermoelectric materials and device applications.

这项工作研究了掺锑（Sb）的Bi ₂ Te ₃（厚度〜60 nm）和Bi _0.5 Sb _1.5 Te ₃（厚度〜60 nm）纳米结构薄膜的热电性能。在高真空条件下通过热蒸发将膜沉积在玻璃基板上。通过标准表征技术研究了膜的结构和形态。X射线衍射用于确定薄膜合成过程中不同相的形成。用Van der Pauw和Harman方法测量电导率（σ）和品质因数（ZT ）。。此外，将样品在高真空下于200°C退火1小时，以提高沉积膜的质量和ZT。发现掺Sb的Bi ₂ Te ₃膜的导电性是Bi _0.5 Sb _1.5 Te ₃膜的〜6.5_倍。然而，由于Sb的塞贝克系数（S）的值小，所以两个膜表现出可比较的ZT值。这项研究代表了在热电材料和设备应用领域的重大贡献。