Abstract In this study, tungsten disulfide (WS2) and tungsten trioxide (WO3) thin films are deposited on n-Si by RF sputtering technique. The optical, morphological and structural characteristics of these films are investigated. The XRD patterns showed that highly crystallinity have been obtained with dominant characteristic diffraction peaks of the WS2 and WO3. The SEM images show that these films are nearly uniform and covered all surface of substrates. Furthermore, the WS2 film has two-dimensional (2D) vertical layers while the WO3 has three-dimensional (3D) structure. From the XPS spectra, it revealed that the peaks confirmed the formation of WS2 and WO3 phases. The Raman spectra presented that different vibrational modes and phases are characteristics of the WS2 and WO3 thin films. Electrical properties of W/n-Si metal-semiconductor (MS) and W/WS2/n-Si and W/WO3/n-Si metal-interfacial layer-semiconductor (MIS) diodes are investigated using current-voltage (I-V) and capacitance-voltage (C-V) characteristics at various temperatures. It was found that I-V and C-V characteristics are strongly dependent on temperature and the interfacial WS2 and WO3 layers are significant roles for the electrical properties of W/WS2/n-Si and W/WO3/n-Si devices.

中文翻译：

---

具有通过射频溅射技术沉积的二维 WS2 和三维 WO3 界面的 W/n-Si 结构的温度相关电流和电容-电压特性

摘要 本研究采用射频溅射技术在 n-Si 上沉积二硫化钨 (WS2) 和三氧化钨 (WO3) 薄膜。研究了这些薄膜的光学、形态和结构特性。XRD 图案表明，WS2 和WO3 的主要特征衍射峰已经获得了高结晶度。SEM 图像显示这些薄膜几乎是均匀的并且覆盖了基材的所有表面。此外，WS2 薄膜具有二维 (2D) 垂直层，而 WO3 具有三维 (3D) 结构。从 XPS 光谱可以看出，这些峰证实了 WS2 和 WO3 相的形成。拉曼光谱表明，不同的振动模式和相位是 WS2 和 WO3 薄膜的特征。W/n-Si 金属半导体 (MS) 和 W/WS2/n-Si 和 W/WO3/n-Si 金属界面层半导体 (MIS) 二极管的电性能使用电流-电压 (IV) 和不同温度下的电容-电压 (CV) 特性。发现 IV 和 CV 特性强烈依赖于温度，界面 WS2 和 WO3 层对 W/WS2/n-Si 和 W/WO3/n-Si 器件的电性能起着重要作用。