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Stress-Induced Magnetic Anisotropy Enabling Engineering of Magnetic Softness GMI Effect and Domain Wall Dynamics of Amorphous Microwires
Physics of Metals and Metallography ( IF 1.2 ) Pub Date : 2020-05-19 , DOI: 10.1134/s0031918x20040183
V. Zhukova , P. Corte-Leon , L. González-Legarreta , M. Ipatov , A. Talaat , J. M. Blanco , J. Gonzalez , J. Olivera , A. Zhukov

Abstract—We showed that stress-annealing performed under proper conditions can improve magnetic softness, domain wall (DW) velocity and giant magneto-impedance (GMI) effect of Fe-based microwires. One order of magnitude improvement of GMI ratio and more than 100% increase of DW velocity have been achieved by stress-annealing. Observed dependencies have been related to the domain structure modification evidenced from the evolution of the hysteresis loops upon stress-annealing. We discussed observed results considering that the outer domain shell with transverse magnetic anisotropy affects the travelling DW in a similar way as the application of transverse bias magnetic field. GMI ratio improvement is attributed to beneficial magnetic anisotropy distribution achieved by stress-annealing.



中文翻译:

非晶硅微丝的GMI效应和畴壁动力学的应力诱导磁各向异性实现工程

摘要—我们证明了在适当的条件下进行的应力退火可以改善铁基微丝的磁软度,畴壁(DW)速度和巨磁阻抗(GMI)效应。通过应力退火,GMI比提高了一个数量级,DW速度提高了100%以上。观察到的依赖性已与域结构修改相关,该结构结构修改是由应力退火后的磁滞回线的演变所证明的。我们讨论了观察到的结果,考虑到具有横向磁各向异性的外层壳以与施加横向偏置磁场相似的方式影响行进DW。GMI比的提高归因于通过应力退火实现的有益的磁各向异性分布。

更新日期:2020-05-19
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