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Influence of the pressure range on temperature coefficient of resistivity (TCR) for polysilicon piezoresistive MEMS pressure sensor
Physica Scripta ( IF 2.9 ) Pub Date : 2020-05-27 , DOI: 10.1088/1402-4896/ab93e7
Samridhi 1 , Kulwant Singh 2 , P A Alvi 1
Affiliation  

Sensitivity with respect to physical change of any type of sensor depends upon structure of the sensor and sensing material. If sensor is sensitive with more than single physical change (pressure or temperature etc.) than sensitivity will get affected because of conflict in impact due to multiple physical parameters. Depending upon the designer's intuition and experience, a variety of shapes of sensor had been proposed which can bear both the pressure and temperature. To understand the influence of temperature and pressure on the linearity and sensitivity, pressure sensors has been designed having 50μm thick square diaphragm is being simulated and analyzed. The effect of pressure on Temperature Coefficient of Resistivity (TCR) of poly-silicon pressure sensor has been investigated in this paper. The stresses tempted in the piezoresistors and dislocation created in diaphragm have been studied using finite element method (FEM). The physical characteristics of sensor have been determined within the temperature range from 10oC to 100oC under the pressure range of 0 to 100 psi. It has been observed that TCR reduces with increasing pressure up to 30 psi, and beyond this pressure, the TCR begins to increase and thus the TCR shows the duality in nature. At 100 psi pressure, the calculated TCR for the diaphragm is found of the order of ~7.7×10-3 (/0C). Thus, in conclusion, the pressure range ~ 40-100 psi is recommended as the optimal range to achieve the better sensitivity. The temperature sensitivity of designed sensor has been found to be ~0.10455 mV/0C while the pressure sensitivity of the proposed sensors which has been found to be 1.20051 mV/psi. Hence, designed sensor can be used as both pressure and temperature sensing device incorporated into a single sensor.

中文翻译:

压力范围对多晶硅压阻式MEMS压力传感器电阻率温度系数(TCR)的影响

任何类型传感器对物理变化的敏感性取决于传感器和传感材料的结构。如果传感器对多个物理变化(压力或温度等)敏感,则由于多个物理参数的影响冲突,灵敏度会受到影响。根据设计者的直觉和经验,已经提出了各种形状的传感器,它们可以承受压力和温度。为了了解温度和压力对线性度和灵敏度的影响,设计了具有 50μm 厚方形膜片的压力传感器正在被模拟和分析。本文研究了压力对多晶硅压力传感器的电阻温度系数(TCR)的影响。已经使用有限元方法 (FEM) 研究了压敏电阻器中产生的应力和隔膜中产生的位错。传感器的物理特性已在 10oC 至 100oC 的温度范围内和 0 至 100 psi 的压力范围内确定。已经观察到,TCR随着压力增加到30 psi而降低,超过这个压力,TCR开始增加,因此TCR显示出本质上的二元性。在 100 psi 压力下,计算出的隔膜 TCR 约为 ~7.7×10-3 (/0C)。因此,总而言之,建议将压力范围 ~ 40-100 psi 作为实现更好灵敏度的最佳范围。已发现设计传感器的温度灵敏度为 ~0.10455 mV/0C,而所提出的传感器的压力灵敏度为 1。20051 毫伏/磅/平方英寸。因此,设计的传感器可以用作集成到单个传感器中的压力和温度传感装置。
更新日期:2020-05-27
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