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Broadband terahertz solid-state emitter driven by Yb:YAG thin-disk oscillator
Journal of Physics B: Atomic, Molecular and Optical Physics ( IF 1.6 ) Pub Date : 2020-05-26 , DOI: 10.1088/1361-6455/ab8049
Gaia Barbiero 1, 2 , Haochuan Wang 1, 2 , Jonathan Brons 3 , Bo-Han Chen 1, 2 , Vladimir Pervak 1 , Hanieh Fattahi 4
Affiliation  

We report on a table-top, high-power, terahertz (THz) solid-state emitter driven by few-cycle near-infrared pulses at 16 MHz repetition rate in gallium phosphide (GaP) crystals. Two external nonlinear multi-pass cells are used to shorten the output of a home-built, 100 W, 265 fs, 6.2 μ J Yb:YAG thin-disk oscillator, operating at 1030 nm, to 18 fs with 3.78 μ J pulse energy. The broadband spectrum of the THz driver allowed for the extension of the THz cutoff frequency to 5.7 THz at the dynamic range of 10 4 . By employing the high-power Yb:YAG thin-disk oscillator, the low efficiency of the THz generation is circumvented, resulting in the generation of up to 100 μ W, multi-octave THz pulses at 5 THz cutoff frequency in a 2 mm thick GaP crystal.

中文翻译:

Yb:YAG薄盘振荡器驱动的宽带太赫兹固态发射器

我们报告了一种台式高功率太赫兹(THz)固态发射器,该发射器由磷化镓(GaP)晶体中以16 MHz重复频率的几个周期的近红外脉冲驱动。两个外部非线性多通单元用于将工作频率为1030 nm的100 W,265 fs,6.2μJ Yb:YAG薄盘振荡器的输出功率缩短到18 fs(3.78μJ脉冲能量) 。THz驱动器的宽带频谱允许在10 4的动态范围内将THz截止频率扩展到5.7 THz。通过使用高功率Yb:YAG薄盘振荡器,可以避免太赫兹频率的低效率,从而在2 mm厚的5 THz截止频率下产生高达100μW的多倍频程THz脉冲。 GaP晶体。
更新日期:2020-05-26
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