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Electrical characterization of 180 nm ATLASPix2 HV-CMOS monolithic prototypes for the High-Luminosity LHC
Journal of Instrumentation ( IF 1.3 ) Pub Date : 2020-05-27 , DOI: 10.1088/1748-0221/15/05/p05022
D M S Sultan , S. Gonzalez-Sevilla , D. Ferrere , G. Iacobucci , E. Zaffaroni , W. Wong , M. Kiehn , M. Benoit

We report on the experimental study made on a successive prototype of High-Voltage CMOS (HV-CMOS) ATLASPix2 sensor for the tracking detector application, developed with 180 nm feature size. These sensors are to qualify mainly the peripheral data processing blocks (e.g. Command Decoder, Trigger Buffer, etc.). It is a smaller version of 24 X 36 pixelated sensor in comparison to the earlier generation of ATLASPix1 fabricated in both ams AG, Austria, and TSI Semiconductors, USA. While ams produced ATLASPix2 showed breakdown voltage 50 V in nonirradiated condition as it was seen on its predecessors ATLASpix1, TSI produced prototypes reported breakdown voltage greater than 100 V. The chosen wafer of MCz 20 this http URL P-type substrate resistivity can deplete a few tenths of um, where the process-driven surface damage can have a greater impact on device operating conditions before and after irradiation. In an aim to understand device intrinsic performance at the irradiated case, a dedicated neutron irradiation campaign has been made at JSI for different fluences. Characterizations have been performed at different temperatures after irradiation to analyze the leakage current and breakdown voltage before and after irradiation. TSI prototypes showed a breakdown voltage decrease 90 V due to impact ionization and enhanced effective doping concentration. Results demonstrated for the neutron-irradiated devices up to the fluence of 2 X 10^15 neq/cm2 can still safely be operated at a voltage high enough to allow for high efficiency. Accelerated Annealing steps also made on selective irradiated ATLASPix2 samples, equivalent to more than two years of room-temperature annealing (at 20 degC), and they showed the reassuring expected breakdown voltage increase and damage constant rate alpha^* (geometry dependent) decrease, driven by the beneficial annealing.

中文翻译:

用于高亮度 LHC 的 180 nm ATLASPix2 HV-CMOS 单片原型的电气特性

我们报告了对用于跟踪检测器应用的高压 CMOS (HV-CMOS) ATLASPix2 传感器的连续原型进行的实验研究,该传感器具有 180 nm 特征尺寸。这些传感器主要用于限定外围数据处理块(例如命令解码器、触发缓冲器等)。与奥地利 ams AG 和美国 TSI Semiconductors 制造的上一代 ATLASPix1 相比,它是 24 X 36 像素化传感器的较小版本。虽然 ams 生产的 ATLASPix2 在非辐照条件下显示击穿电压为 50 V,正如其前身 ATLASPix1 所见,但 TSI 生产的原型报告击穿电压大于 100 V。选择的 MCz 20 晶片此 http URL P 型衬底电阻率可以消耗一些十分之一,其中过程驱动的表面损伤会对辐照前后的器件工作条件产生更大的影响。为了了解设备在辐照情况下的内在性能,JSI 已针对不同的通量进行了专门的中子辐照活动。在辐照后的不同温度下进行了表征,以分析辐照前后的漏电流和击穿电压。由于碰撞电离和增强的有效掺杂浓度,TSI 原型显示击穿电压降低了 90 V。结果表明,中子辐照设备的通量高达 2 X 10^15 neq/cm2 仍然可以安全地在足够高的电压下运行以实现高效率。还对选择性辐照 ATLASPix2 样品进行了加速退火步骤,
更新日期:2020-05-27
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