Abstract This paper discusses the edge termination design of high-voltage insulated gate bipolar transistors with large current turn-off switching operation. We discovered that the phenomena of current crowding and impact ionization act as separated heat sources and induce one local hot spot that causes thermal destruction in the edge termination during the turn-off switching period. Optimizing the backside hole injection efficiency and relaxing the electric field of the surface pn junction edge at the edge termination region prevent the above problems. These concepts benefit the dynamic ruggedness under hard-switching conditions. This paper presents our novel edge termination design that achieves robust turn-off capability without deteriorating other performances of the device.

中文翻译：

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CSTBT™ 技术适用于具有高动态鲁棒性和低总体损耗的高压应用

摘要 本文讨论了具有大电流关断开关操作的高压绝缘栅双极晶体管的边缘终端设计。我们发现电流拥挤和碰撞电离现象充当分离的热源，并在关断开关期间引起一个局部热点，导致边缘终端热破坏。优化背面空穴注入效率和缓和边缘终止区的表面 pn 结边缘的电场可以防止上述问题。这些概念有利于硬开关条件下的动态耐用性。本文介绍了我们新颖的边缘端接设计，该设计可在不降低设备其他性能的情况下实现稳健的关断能力。