Thermoelectric properties of AA-stacked bilayer SiC in presence of a magnetic field and a bias voltage were studied using the tight binding model. Green function method was applied to calculate thermal conductivity and Seebeck coefficient under the influence of bias voltage and external magnetic field within the linear response theory. We obtained that the effect of bias voltage is to increase energy gap of the bilayer SiC, unlike the magnetic field effect. Thermal conductivity and Seebeck coefficient of bilayer SiC depend on magnetic field and bias voltage. We obtained that the Seebeck coefficient sign is positive, which means the charge carriers are holes, in the whole range of temperature for different values of applied bias voltage and applied magnetic field. Also, the peak appeared in temperature dependence of thermal conductivity, Seebeck coefficient, and figure of merit ZT decreased with bias voltage. Finally, we investigated the effects of applying magnetic field on Seebeck coefficient and thermal conductivity of AA-stacked bilayer SiC in details.

使用紧密结合模型研究了AA堆叠的双层SiC在磁场和偏置电压存在下的热电性能。在线性响应理论的基础上，采用格林函数法计算了偏压和外界磁场对导热系数和塞贝克系数的影响。我们获得了偏置电压的作用是增加双层SiC的能隙，这与磁场效应不同。双层SiC的热导率和塞贝克系数取决于磁场和偏置电压。我们获得了塞贝克系数符号为正，这意味着在施加的偏置电压和施加的磁场的不同值的整个温度范围内，电荷载流子为空穴。此外，该峰出现在热导率的温度依赖性上，塞贝克系数和品质因数ZT随偏置电压而降低。最后，我们详细研究了施加磁场对AA堆叠双层SiC的塞贝克系数和热导率的影响。