Using our own computer program, we determined the spatial distribution of lattice strains in the HgCdTe heterostructure grown on a GaAs substrate. Lattice stress resulting from lattice mismatch between the substrate and the epitaxial layer and bending of the heterostructure is almost completely relaxed by misfit dislocations forming matrixes in the interfaces’ areas. The average distances between dislocation lines in individual interfaces were calculated based on the minimum energy, i.e. elastic energy condition resulting from the interaction of stress fields and deformations caused by lattice misfit, bending and the presence of dislocation plus electrical energy of dislocations.

中文翻译：

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在 GaAs 衬底上生长的 CdHgTe 异质结构中晶格应变、弯曲和错配位错的数值估计

使用我们自己的计算机程序，我们确定了生长在 GaAs 衬底上的 HgCdTe 异质结构中晶格应变的空间分布。由衬底和外延层之间的晶格失配和异质结构的弯曲引起的晶格应力几乎完全被错配位错在界面区域形成矩阵所释放。单个界面中位错线之间的平均距离是基于最小能量计算的，即由应力场和由晶格失配、弯曲和位错的存在以及位错的电能引起的变形的相互作用产生的弹性能量条件。