We report on the modeling of polarization-induced two-dimensional electron gas (2DEG) formation at ${\epsilon}$-AlGaO3 / ${\epsilon}$-Ga2O3 heterointerface and the effect of spontaneous polarization (Psp) reversal on 2DEG density in ${\epsilon}$-Ga2O3 /${\epsilon}$-AlGaO3 / ${\epsilon}$-Ga2O3 double heterostructures. Density-functional theory (DFT) is utilized to calculate the material properties of ${\epsilon}$-Ga2O3 and ${\epsilon}$-AlGaO3 alloys. Using Schrodinger-Poisson solver along with DFT calculated parameters, the 2DEG density is calculated as a function of barrier type and thickness. By optimizing the layer thicknesses of ${\epsilon}$-Ga2O3/${\epsilon}$-AlGaO3/${\epsilon}$-Ga2O3 heterostructures, charge contrast ratios exceeding 1600 are obtained. This computational study indicates the high potential for ${\epsilon}$-Ga2O3-based heterostructure devices for non-volatile memories and neuromorphic applications.

中文翻译：

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ε-AlGaO ₃ / ε-Ga ₂ O ₃异质结构中高度可调的极化工程二维电子气

我们报告了 ${\epsilon}$-AlGaO3 / ${\epsilon}$-Ga2O3 异质界面的极化诱导二维电子气 (2DEG) 形成的建模以及自发极化 (Psp) 反转对 2DEG 密度的影响在 ${\epsilon}$-Ga2O3 /${\epsilon}$-AlGaO3 / ${\epsilon}$-Ga2O3 双异质结构中。密度泛函理论 (DFT) 用于计算 ${\epsilon}$-Ga2O3 和 ${\epsilon}$-AlGaO3 合金的材料特性。使用薛定谔-泊松求解器和 DFT 计算参数，2DEG 密度计算为势垒类型和厚度的函数。通过优化 ${\epsilon}$-Ga2O3/${\epsilon}$-AlGaO3/${\epsilon}$-Ga2O3 异质结构的层厚，获得超过 1600 的电荷对比度。