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Solution Processed Organic Transistors on Polymeric Gate Dielectric with Mobility Exceeding 15 cm2 V−1 s−1
Physica Status Solidi-Rapid Research Letters ( IF 2.8 ) Pub Date : 2020-06-05 , DOI: 10.1002/pssr.202000156
Anubha Bilgaiyan 1 , Seung-Il Cho 1 , Miho Abiko 1 , Kaori Watanabe 1 , Makoto Mizukami 1
Affiliation  

Herein, 6,6′ bis (trans‐4‐pentylcyclohexyl)‐dinaphtho[2,1‐b:2′,1′‐f ]thieno[3,2‐b]thiophene (5H‐21DNTT)—a solution‐processable derivative of DNTT—is characterized and studied for its potential as a crystalline solution‐processed organic semiconductor to achieve high mobility and stable organic thin‐film transistor (OTFT) operation. The performance of a bottom‐gate, bottom‐contact OTFT with a 5H‐21DNTT semiconductor is analyzed with different polymeric organic gate dielectrics via various solution‐processed techniques. In comparison to other polymeric gate dielectrics, Parylene C exhibited a superior performance for 5H‐21DNTT OTFT devices, and the OTFT devices show a remarkable average mobility of 10.9 cm2 V−1 s−1, as well as a maximum mobility exceeding 15 cm2 V−1 s−1, with a 100% reliability factor.

中文翻译:

迁移率超过15 cm2 V-1 s-1的高分子栅介质上的固溶处理有机晶体管

本文中的6,6'双(反式-4-戊基环己基)-二萘并[2,1- b:2',1'- f ]噻吩并[3,2- b ]噻吩(5H-21DNTT)-可溶液处理DNTT的衍生物—表征并研究了其作为结晶溶液处理的有机半导体的潜力,以实现高迁移率和稳定的有机薄膜晶体管(OTFT)操作。通过各种溶液处理技术,使用不同的聚合有机栅极电介质分析了带有5H-21DNTT半导体的底栅,底接触OTFT的性能。与其他聚合物栅极电介质相比,Parylene C对5H-21DNTT OTFT器件表现出优异的性能,而OTFT器件的平均迁移率高达10.9 cm 2  V -1 s -1,以及最大迁移率超过15 cm 2  V -1  s -1,可靠性因子为100%。
更新日期:2020-06-05
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