Abstract Present article deals with fabrication of UV–Visible radiation sensing photodetector (PD) by architecting planar and sandwiched (PD1 and PD2) electrode configurations on ZnO-PS:p-Si heterostructure. PS:p-Si structure is prepared by electrochemical anodization method. Thin ZnO layer of ~162 nm is deposited on PS:p-Si substrate using pulsed DC magnetron sputtering technique. Gold (Au) is combined with Aluminium (Al) to provide rectifying Schottky contacts to the devices. Prior to device testing it is tested for various conventional characterizations. FESEM studies confirm uniform deposition of nanocrystalline ZnO thin film with mean particle size of ~ 35 nm, whereas its cross section shows uniform interface between ZnO and PS with combined thickness of ~700 nm. Cross sectional EDX analysis confirms diffusion of ZnO particles into PS layer. UV–vis absorption spectrum gives bandgap of ZnO as ~3.3 eV. Reflectance measurement of the heterostructure shows decrease in reflectivity compared to bulk c-Si with ZnO-PS:p-Si showing multiple interference pattern compared to bare ZnO coated on glass within the spectral range 200 nm-800 nm. The pattern is remarkably increased compared to that of PS:p-Si. Photoluminescence study reveals various luminescence bands peaked at ~378 nm, 388 nm, 398 nm, 410 nm, 420 nm, 433 nm, 450 nm, 467 nm, 482 nm 492 nm and 597 nm. Current- Voltage (I–V) measurement for dark current (Id) gives low leakage current of the devices PD1 and PD2 respectively as 6.6 × 10−8 A and 7.5 × 10−7A at -5V, which is however an order of magnitude more than the ZnO coated one on glass. Both the devices PD1 and PD2 show UV–Visible photoresponse, whereas the ZnO device on glass shows response to UV (375 nm) only. Both the devices show response time ~1 s in visible range which is nearly half the value in UV range.

中文翻译：

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ZnO-多孔硅 (PS):p-Si 混合 MSM 异质结构的独特波段紫外-可见光传感特性

摘要 本文涉及通过在 ZnO-PS:p-Si 异质结构上构建平面和夹层（PD1 和 PD2）电极配置来制造紫外-可见光辐射传感光电探测器 (PD)。PS:p-Si结构采用电化学阳极氧化法制备。使用脉冲直流磁控溅射技术在 PS:p-Si 衬底上沉积约 162 nm 的薄 ZnO 层。金 (Au) 与铝 (Al) 结合为器件提供整流肖特基触点。在设备测试之前，它会针对各种传统特性进行测试。FESEM 研究证实纳米晶 ZnO 薄膜均匀沉积，平均粒径约为 35 nm，而其横截面显示 ZnO 和 PS 之间的界面均匀，总厚度约为 700 nm。横截面 EDX 分析证实了 ZnO 颗粒扩散到 PS 层中。UV-vis 吸收光谱给出 ZnO 的带隙为~3.3 eV。异质结构的反射率测量显示，与块体 c-Si 相比反射率降低，ZnO-PS:p-Si 与涂覆在玻璃上的裸 ZnO 相比，在 200 nm-800 nm 的光谱范围内显示出多重干涉图案。与 PS:p-Si 相比，图案显着增加。光致发光研究揭示了各种发光带在 ~378 nm、388 nm、398 nm、410 nm、420 ​​nm、433 nm、450 nm、467 nm、482 nm、492 nm 和 597 nm 处达到峰值。暗电流 (Id) 的电流-电压 (I-V) 测量给出了器件 PD1 和 PD2 的低漏电流，分别为 6.6 × 10−8 A 和 7.5 × 10−7A at -5V，然而这是一个数量级比在玻璃上涂一层 ZnO 多。PD1 和 PD2 器件均显示出紫外-可见光响应，而玻璃上的 ZnO 器件仅显示对 UV (375 nm) 的响应。这两款设备在可见光范围内的响应时间约为 1 秒，几乎是紫外线范围内值的一半。