In this paper, 2-D analytical models of channel central potential, threshold voltage, subthreshold current and subthreshold swing for graded channel double gate (GC-DG) Junctionless FETs (JLFETs) have been presented. The 2-D Poisson’s equation has been solved to determine the channel central potential by parabolic approximation method with appropriate boundary conditions. The minimum potential for the channel is obtained from the channel potential expression in order to formulate threshold voltage, subthreshold current and subthreshold swing. The validity of the model results has been verified using TCAD numerical data obtained from 2-D ATLAS device simulator from Silvaco.

本文针对梯度沟道双栅极（GC-DG）无结FET（JLFET），提出了沟道中心电势，阈值电压，亚阈值电流和亚阈值摆幅的二维分析模型。解决了二维泊松方程，通过抛物线近似法在适当的边界条件下确定了通道中心电势。从通道电势表达式中获得通道的最小电势，以便制定阈值电压，亚阈值电流和亚阈值摆幅。使用从Silvaco的2-D ATLAS设备模拟器获得的TCAD数值数据验证了模型结果的有效性。