The aim of this work is to preliminary investigate the photocatalytic performances toward the removal of eriochrome black-T dye under UV and visible irradiation using Eu-doped ZnO obtained through a supercritical antisolvent (SAS) process in comparison with Eu-doped ZnO prepared by drying-precipitation method and Eu-doped TiO₂ prepared by sol–gel route. XRD patterns show that the presence of Eu⁺³ does not change the crystalline structure of both TiO₂ and ZnO, evidencing that Eu⁺³ is successfully incorporated into the semiconductors lattice. The morphology of samples obtained after SAS micronization consists of nanoparticles with a regular shape and characterized by average size in the range 65.0–84.7 nm. UV–Vis DRS spectra evidence that the doping of TiO₂ and ZnO with Eu⁺³ leads to an increase of band gap value with respect to undoped samples because of the presence of dopant ions into the host structure. Eu-doped ZnO sample synthetized by the SAS process shows better photocatalytic efficiency in terms of both discoloration and mineralization, reaching the almost total dye removal after 240 min of UV light irradiation. The enhancement of the photocatalytic activity of Eu-doped ZnO sample synthetized by SAS process is ascribed to the presence of Eu⁺³ in the lattice, but also to the higher specific surface area, smaller crystallite size and its morphology features, if compared with Eu-doped ZnO prepared by drying-precipitation method and Eu-doped TiO₂ prepared by sol–gel route.

这项工作的目的是与通过干燥制备的Eu掺杂的ZnO进行比较，初步研究通过超临界抗溶剂（SAS）工艺获得的Eu掺杂的ZnO在紫外和可见光下对去除铬红T染料的光催化性能。沉淀法和溶胶-凝胶法制备的Eu掺杂TiO ₂。XRD图谱表明，Eu ⁺³的存在不会改变TiO ₂和ZnO的晶体结构，证明Eu ⁺³被成功地并入了半导体晶格。SAS微粉化后获得的样品的形态包括规则形状的纳米颗粒，其特征是平均粒径在65.0–84.7 nm之间。UV-Vis DRS光谱证明，由于主体结构中存在掺杂离子，与未掺杂样品相比，Eu ⁺³掺杂TiO ₂和ZnO导致带隙值增加。通过SAS工艺合成的Eu掺杂的ZnO样品在变色和矿化方面显示出更好的光催化效率，在240分钟的紫外线照射下达到了几乎全部的染料去除率。SAS法合成Eu掺杂ZnO样品的光催化活性增强归因于Eu的存在与干沉淀法制得的Eu掺杂的ZnO和溶胶-凝胶法制得的Eu掺杂的TiO ₂相比，晶格中的⁺³，但比表面积更大，微晶尺寸更小，其形貌特征也更好。