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Anomalous pressure dependence of the electronic transport and anisotropy in SrIrO3 films
Journal of Physics: Condensed Matter ( IF 2.7 ) Pub Date : 2020-05-22 , DOI: 10.1088/1361-648x/ab8a9e
A G Zaitsev 1 , A Beck 1 , A K Jaiswal 1, 2 , R Singh 2 , R Schneider 1 , M Le Tacon 1 , D Fuchs 1
Affiliation  

Iridate oxides display exotic physical properties that arise from the interplay between a large spin-orbit coupling and electron correlations. Here, we present a comprehensive study of the effects of hydrostatic pressure on the electronic transport properties of SrIrO3 (SIO), a system that has recently attracted a lot of attention as potential correlated Dirac semimetal. Our investigations on untwinned thin films of SIO reveal that the electrical resistivity of this material is intrinsically anisotropic and controlled by the orthorhombic distortion of the perovskite unit cell. These effects provide another evidence for the strong coupling between the electronic and lattice degrees of freedom in this class of compounds. Upon increasing pressure, a systematic increase of the transport anisotropies is observed. The anomalous pressure-induced changes of the resistivity cannot be accounted for by the pressure dependence of the density of the electron charge carriers, as inferred from Hall effect measurements. Moreover, pressure-induced rotations of the IrO6 octahedra likely occur within the distorted perovskite unit cell and affect electron mobility of this system.

中文翻译:

SrIrO3 薄膜中电子输运和各向异性的反常压力依赖性

铱氧化物显示出奇特的物理特性,这些特性源于大自旋轨道耦合和电子相关性之间的相互作用。在这里,我们全面研究了静水压力对 SrIrO3 (SIO) 电子输运特性的影响,该系统最近作为潜在的相关狄拉克半金属引起了很多关注。我们对 SIO 非孪晶薄膜的研究表明,这种材料的电阻率本质上是各向异性的,并受钙钛矿晶胞的正交畸变控制。这些效应为此类化合物的电子自由度和晶格自由度之间的强耦合提供了另一个证据。随着压力的增加,观察到传输各向异性的系统性增加。正如从霍尔效应测量推断的那样,电子电荷载流子密度的压力依赖性不能解释由压力引起的电阻率的异常变化。此外,IrO6 八面体的压力诱导旋转可能发生在扭曲的钙钛矿晶胞内,并影响该系统的电子迁移率。
更新日期:2020-05-22
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