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New trends in silicon detector technology
Journal of Instrumentation ( IF 1.3 ) Pub Date : 2020-05-20 , DOI: 10.1088/1748-0221/15/05/c05057
G. Casse 1, 2
Affiliation  

Modern detector science and technology has originated from High Energy Physics experiment needs in the '80's of the past century, based on the achievement and knowledge of the silicon industry of the time. The first segmented array of diodes (a microstrip sensor) was developed to track vertices at the NA11 experiment at the SPS accelerator at CERN (Geneva, CH) . During the following years, detector technology developed into a special branch of the huge silicon technology enterprise that has been arguably the biggest contributor to the evolution of most of the economical, social and scientific activities of mankind. If, and how, detector technology for science has kept the pace with the spectacular speed of evolution of mainstream silicon technology (namely, the microelectronics industry) is the object of this paper, that will also point out the special requirements of detectors for science and how these can be linked to modern microelectronics trends.

中文翻译:

硅检测器技术的新趋势

基于当时硅产业的成就和知识,现代检测器科学技术源于上个世纪80年代的高能物理实验需求。在CERN(日内瓦,CH)的SPS加速器的NA11实验中,开发了第一个分段的二极管阵列(微带传感器)以跟踪顶点。在随后的几年中,检测器技术发展成为庞大的硅技术企业的一个特殊分支,可以说,它是人类大多数经济,社会和科学活动发展的最大贡献者。本文的目的是,科学检测器技术是否以及如何与主流硅技术(即微电子工业)的惊人发展速度保持同步,
更新日期:2020-05-20
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