In this paper, resistive random-access memory (RRAM) with InGaO (IGO) as an active layer was fabricated by radio-frequency (RF) sputtering system and the resistive switching mechanism with the different top electrode (TE) of Pt, Ti, and Al were investigated. The Pt/IGO/Pt/Ti RRAM exhibits typical bipolar resistive switching features with an average set voltage of 1.73 V, average reset voltage of −0.60 V, average high resistance state (HRS) of 54,954.09 Ω, and the average low resistance state (LRS) of 64.97 Ω, respectively. Ti and Al were substituted for Pt as TE, and the conductive mechanism was different from TE of Pt. When Ti and Al were deposited onto the switching layer, both TE of Ti and Al will form oxidation of TiO_x and AlO_x because of their high activity to oxygen. The oxidation will have different effects on the forming of filaments, which may further affect the RRAM performance. The details of different mechanisms caused by different TE will be discussed. In brief, IGO is an excellent candidate for the RRAM device and with the aids of TiO_x, the set voltage, and reset voltage, HRS and LRS become much more stable.

中文翻译：

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不同顶部电极金属的非晶态IGO电阻随机存取存储器的导电机理研究

本文通过射频（RF）溅射系统和Pt，Ti，Ti，Ti，Ti，Ti，Ti，Ti等不同的上电极（TE）的电阻切换机制，制作了以InGaO（IGO）为有源层的电阻型随机存取存储器（RRAM）。和铝进行了调查。Pt / IGO / Pt / Ti RRAM具有典型的双极阻性开关功能，平均设定电压为1.73 V，平均复位电压为-0.60 V，平均高阻态（HRS）为54,954.09Ω，平均低阻态（ LRS）分别为64.97Ω。用Ti和Al代替Pt作为TE，其导电机理与Pt的TE不同。当Ti和Al沉积到转换层上时，Ti和Al的TE都会形成TiO _x和AlO _x的氧化因为它们对氧气的高活性。氧化将对长丝的形成产生不同的影响，这可能进一步影响RRAM的性能。将讨论由不同TE引起的不同机制的细节。简而言之，IGO是RRAM器件的极佳候选者，借助于TiO _x，设置电压和复位电压，HRS和LRS变得更加稳定。