We consider the excitonic effects on the thermal properties in the AB-stacked bilayer graphene. The calculations are based on the bilayer generalization of the usual Hubbard model at the half-filling. The full interaction bandwidth is used without any low-energy assumption. We obtain the unusually high values for the electronic figure of merit even at the room-temperatures which is very promising for the thermoelectric applications of the AB-bilayer structure. We discuss the effects of the interlayer Coulomb interaction and temperature on different thermal parameters in the bilayer graphene and we emphasize the role of the charge neutrality point in the thermal properties and within the excitonic insulator transition scenario. The calculated values of the rate of thermoelectric conversion efficiency suggest the possibility of high-performance device applications of AB-bilayer graphene.

我们考虑了激子效应对AB堆叠双层石墨烯中热性能的影响。这些计算基于半填充时常规Hubbard模型的双层概括。无需任何低能耗假设即可使用完整的交互带宽。即使在室温下，我们也能获得非常优异的电子品质因数，这对于AB双层结构的热电应用非常有希望。我们讨论了双层石墨烯中层间库仑相互作用和温度对不同热参数的影响，并强调了电荷中性点在热性质和激子绝缘子过渡过程中的作用。