This paper investigates the impacts of post-rapid thermal anneal (RTA) and thickness of ZrO2 on the polarization P and electrical characteristics of TaN/ZrO2/Ge capacitors and FeFETs, respectively. After the RTA ranging from 350 to 500 °C, TaN/ZrO2/Ge capacitors with 2.5 and 4 nm-thick amorphous ZrO2 film exhibit the stable P. It is proposed that the ferroelectric behavior originates from the migration of the voltage-driven dipoles formed by the oxygen vacancies and negative charges. FeFETs with 2.5 nm, 4 nm, and 9 nm ZrO2 demonstrate the decent memory window (MW) with 100 ns program/erase pulses. A 4-nm-thick ZrO2 FeFET has significantly improved fatigue and retention characteristics compared to devices with 2.5 nm and 9 nm ZrO2. The retention performance of the ZrO2 FeFET can be improved with the increase of the RTA temperature. An MW of ~ 0.46 V is extrapolated to be maintained over 10 years for the device with 4 nm ZrO2.

中文翻译：

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可切换的氧空位偶极子使能的ZrO2铁电场效应晶体管。

本文研究了快速后热退火（RTA）和ZrO2的厚度分别对TaN / ZrO2 / Ge电容器和FeFET的极化P和电特性的影响。在350至500°C的RTA之后，具有2.5和4 nm厚非晶ZrO2膜的TaN / ZrO2 / Ge电容器表现出稳定的P。建议铁电行为源自形成的电压驱动偶极子的迁移由氧空位和负电荷引起。ZrO2为2.5 nm，4 nm和9 nm的FeFET具有100 ns编程/擦除脉冲的体面存储窗口（MW）。与具有2.5 nm和9 nm ZrO2的器件相比，厚度为4 nm的ZrO2 FeFET具有显着改善的疲劳和保持特性。ZrO2 FeFET的保持性能可以随着RTA温度的升高而提高。兆瓦〜0。