A device design technique for boosting output resistance ( ${R}_{\text {out}}$ ) characteristics of long-channel halo-doped nMOSFETs for replacement gate (RMG) high- ${k}$ /metal gate (HK/MG) devices is proposed based on numerical simulations. We show that the self-aligned halo-compensated channel implant (HCCI) that is carried out after dummy poly gate removal provides compensation for the conventional halo doping. This can be utilized to mitigate the magnitude of potential drop beyond saturation at the drain end so that the long-channel ${R}_{\text {out}}$ can be boosted relative to the conventional halo-doped device. In addition, we achieve an improved ${V}_{t}$ roll-off behavior, an advantage to hot carrier injection (HCI) characteristics at high voltage operation, and the lowered short-channel drain-induced barrier lowering (DIBL) and intrinsic delay via the optimization of the source/drain (S/D) doping profile. HCCI technique can be implemented using a process flow that is compatible with the RMG HK/MG system-on-chip (SoC) technology in the mass production.

中文翻译：

---

使用自对准光晕补偿沟道注入替代栅极高 k/金属栅极 nMOSFET

一种提高输出电阻的器件设计技术（ ${R}_{\text {out}}$ ) 用于替代栅极 (RMG) 的长沟道卤代掺杂 nMOSFET 的特性 ${k}$ /金属栅极（HK/MG）器件是基于数值模拟提出的。我们展示了在去除虚拟多晶栅之后进行的自对准晕补偿沟道注入 (HCCI) 为传统的晕圈掺杂提供了补偿。这可用于减轻漏极端超过饱和的电位降幅度，从而使长沟道 ${R}_{\text {out}}$ 可以相对于传统的卤代掺杂器件进行升压。此外，我们还实现了改进 ${V}_{t}$ 滚降行为、高压操作下热载流子注入 (HCI) 特性的优势，以及通过优化源极/漏极 (S/D) 降低短沟道漏极引起的势垒降低 (DIBL) 和固有延迟掺杂概况。HCCI 技术可以使用与批量生产中的 RMG HK/MG 片上系统 (SoC) 技术兼容的工艺流程来实现。