The cold source field-effect transistor (CSFET), enabled by novel source engineering, is a promising alternative to achieve sub-60 mV/dec steep-slope switching. For the first time, we develop an industry-standard TCAD approach for the CSFET with an effective cold carrier density of states (DOS) model which captures the underlying physics of DOS engineering, cold carrier injection, and thermalization in the device. The simulation scheme uses nonequilibrium Green’s function (NEGF) simulation for calibration. The effects of source engineering, rethermalization, and channel tunneling are extensively investigated on a Si-based double-gate CSFET. Its merits are highlighted by comparison with a conventional MOSFET under various temperatures, thicknesses, and gate lengths, showing improved ${I} _{ {\mathrm{\scriptscriptstyle ON}}}/{I} _{ {\mathrm{\scriptscriptstyle OFF}}}$ in ultrascaled MOSFET.

中文翻译：

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具有有效载流子分布模型的陡坡硅冷源 FET 的设计与仿真

由新型源工程实现的冷源场效应晶体管 (CSFT) 是实现低于 60 mV/dec 陡坡开关的有前途的替代方案。我们首次为 CSFET 开发了一种行业标准的 TCAD 方法，该方法具有有效的冷载流子状态密度 (DOS) 模型，该模型捕获了 DOS 工程、冷载流子注入和设备中的热化的基础物理。模拟方案使用非平衡格林函数 (NEGF) 模拟进行校准。源工程、再热化和沟道隧道效应在 Si 基双栅极 CSFET 上得到了广泛研究。在各种温度、厚度和栅极长度下，与传统 MOSFET 相比，它的优点得到了突出，