In this article, the effects of redundant electrode width on stability of inverted staggered via-contact structured amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) under hot-carrier stress (HCS) were investigated. It is found that devices with a larger redundant electrode width have a severer degradation behavior after HCS. Capacitance–voltage measurements were conducted to study the degradation mechanism and technology computer-aided design (TCAD) simulation was employed to understand the different degradation behaviors.

中文翻译：

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冗余电极宽度对热载流子应力下a-InGaZnO薄膜晶体管稳定性的影响

在本文中，研究了冗余电极宽度对热载流子应力 (HCS) 下反向交错式通孔接触结构非晶铟镓锌氧化物薄膜晶体管 (a-IGZO TFT) 稳定性的影响。发现具有较大冗余电极宽度的器件在 HCS 后具有更严重的退化行为。进行电容-电压测量以研究退化机制，并采用技术计算机辅助设计 (TCAD) 模拟来了解不同的退化行为。