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Influence of Different Surface Morphologies on the Performance of High-Voltage, Low-Resistance Diamond Schottky Diodes
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2020-06-01 , DOI: 10.1109/ted.2020.2989733
Philipp Reinke 1 , Fouad Benkhelifa 1 , Lutz Kirste 1 , Heiko Czap 1 , Lucas Pinti 2 , Verena Zurbig 3 , Volker Cimalla 1 , Christoph Nebel 1 , Oliver Ambacher 1
Affiliation  

Vertical diamond Schottky diodes with blocking voltages ${V}_{\text {BD}} > {2.4}$ kV and ON-resistances ${R}_{\textsf {ON}} < {400}~\text{m}\Omega $ cm 2 were fabricated on homoepitaxially grown diamond layers with different surface morphologies. The morphology (smooth as-grown, hillock-rich, polished) influences the Schottky barrier, the carrier transport properties, and ultimately the device performance. The smooth as-grown sample exhibited a low reverse current density ${J}_{\text {Rev}} < {10}\,\,^{\mathrm{ -4}}$ A/cm 2 for reverse voltages up to 2.2 kV. The hillock-rich sample blocked similar voltages with a slight increase in the reverse current density ( ${J}_{\text {Rev}} < {10}\,\,^{\mathrm{ -3}}$ A/cm 2). The calculated 1-D breakdown field, however, was reduced by 30%, indicating a field enhancement induced by the inhomogeneous surface. The polished sample demonstrated a similar breakdown voltage and reverse current density as the smooth as-grown sample, suggesting that a polished surface can be suitable for device fabrication. However, statistical analysis of several diodes of each sample showed the importance of the substrate quality: a high density of defects both reduces the feasible device area and increases the reverse current density. In forward direction, the hillock-rich sample exhibited a secondary Schottky barrier, which could be fit with a modified thermionic emission (TEM) model employing the Lambert W-function. Both polished and smooth samples showed nearly ideal TEM with ideality factors 1.08 and 1.03, respectively. Compared with the literature, all three diodes exhibit an improved Baliga figure of merit for diamond Schottky diodes with ${V}_{\text {BD}} >{2}$ kV.

中文翻译:

不同表面形貌对高压、低阻金刚石肖特基二极管性能的影响

具有阻断电压的垂直金刚石肖特基二极管 ${V}_{\text {BD}} > {2.4}$ kV 和导通电阻 ${R}_{\textsf {ON}} < {400}~\text{m}\Omega $ cm 2是在具有不同表面形态的同质外延生长的金刚石层上制造的。形态(生长时光滑、富含丘陵、抛光)影响肖特基势垒、载流子传输特性,并最终影响器件性能。光滑的生长样品表现出低反向电流密度 ${J}_{\text {Rev}} < {10}\,\,^{\mathrm{ -4}}$ A/cm 2用于高达 2.2 kV 的反向电压。富含小丘的样品阻断了类似的电压,但反向电流密度略有增加( ${J}_{\text {Rev}} < {10}\,\,^{\mathrm{ -3}}$ A/厘米2)。然而,计算出的一维击穿场减少了 30%,表明由不均匀表面引起的场增强。抛光后的样品表现出与生长后的光滑样品相似的击穿电压和反向电流密度,表明抛光表面适用于器件制造。然而,对每个样品的几个二极管的统计分析表明基板质量的重要性:高密度的缺陷既减少了可行的器件面积又增加了反向电流密度。在向前的方向上,富含丘陵的样品表现出二次肖特基势垒,这可以与采用兰伯特 W 函数的修改后的热电子发射 (TEM) 模型相吻合。抛光和光滑样品均显示出接近理想的 TEM,理想因子分别为 1.08 和 1.03。 ${V}_{\text {BD}} >{2}$ 千伏。
更新日期:2020-06-01
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