The dV / dt in superjunction metal–oxide–semiconductor field-effect transistors (MOSFETs) during the turn-off transient has been shown to be higher than during the turn-on, which can be attributed to a shorter Miller plateau. In this article, we will show that these asymmetrical turn-on and turn-off characteristics are indirectly detected by the hysteresis of the dynamic gate-to-drain capacitance, ${C}_{\text {GD}}$ . Moreover, this article reveals the mechanisms behind the asymmetrical switching and the origin of the hysteresis, which have been shown to be caused by the difference in the ${C}_{\text {GD}}$ displacement current paths for the turn-off and the turn-on.

中文翻译：

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硬开关超结 MOSFET 的非对称导通和关断机制以及动态 CGD 滞后的起源

这 电压 / dt在超结金属氧化物半导体场效应晶体管 (MOSFET) 中，在关断瞬态期间比在导通期间更高，这可归因于较短的米勒平台。在本文中，我们将展示这些不对称的导通和关断特性是通过动态栅漏电容的迟滞间接检测到的， ${C}_{\text {GD}}$ . 此外，本文揭示了不对称切换背后的机制和滞后的起源，这已被证明是由 ${C}_{\text {GD}}$ 关断和导通的位移电流路径。