We have observed and analyzed the ${1}/{f}^{{1}+\alpha }$ noise in transient leakage current through a metal–insulator–metal stacked high- ${k}$ capacitor of TiN–ZrO₂–TiO₂–TiN. The ZrO₂ and TiO₂ films, formed by atomic layer deposition, are polycrystalline and show geometrical variety at interfaces (i.e., grain boundaries). Two types of transient leakage current are observed: 1) the monotonically decreasing component with power law dependence and 2) the uneven component having power law dependence. To analyze the uneven component in time domain, we assumed that the power law decay occurs due to a gradual change in the redistribution of electrons between interfaces of ZrO₂–TiN and ZrO₂–TiO₂. The frequency-domain analysis shows that the ${1}/{f}^{{1}+\alpha }$ noise comes from the transient leakage of direct tunneling and trap-assisted tunneling ( $\alpha > {0}$ ). In particular, the noise in the uneven component, the random telegraph noise part ( ${\alpha \sim {1}}{)}$ , relates to local trap states in a grain boundary affected by phonon scattering. In addition, the analytical method we developed in this article shows an excellent agreement with various measurements of the transient gate leakage current.

中文翻译：

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高k多晶叠层金属-绝缘体-金属瞬态漏电流中1 / f¹⁺α噪声的实验研究

我们观察并分析了 ${1}/{f}^{{1}+\alpha }$ 通过金属-绝缘体-金属堆叠高电平的瞬态泄漏电流中的噪声 ${k}$ TiN–ZrO ₂ –TiO ₂ –TiN电容器。通过原子层沉积形成的 ZrO ₂和 TiO ₂膜是多晶的并且在界面（即晶界）处显示出几何变化。观察到两种类型的瞬态漏电流：1) 具有幂律依赖性的单调递减分量和 2) 具有幂律依赖性的不均匀分量。为了分析时域中的不均匀分量，我们假设幂律衰减是由于 ZrO ₂ -TiN 和 ZrO ₂ -TiO ₂界面之间电子重新分布的逐渐变化而发生的。频域分析表明， ${1}/{f}^{{1}+\alpha }$ 噪声来自直接隧穿和陷阱辅助隧穿的瞬态泄漏（ $\alpha > {0}$ ）。特别是不均匀分量中的噪声，随机电报噪声部分（ ${\alpha \sim {1}}{)}$ , 与受声子散射影响的晶界中的局部陷阱状态有关。此外，我们在本文中开发的分析方法与瞬态栅极漏电流的各种测量结果非常吻合。