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Sublithographic Patterning of Spin-Coated SiARC Films Using Tilted Ion Implantation
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2020-06-01 , DOI: 10.1109/ted.2020.2989115
Thomas R. Rembert , Shalini Sharma , Luis Garcia , Daniel Connelly , Taji Tomoya , Tatsuya Sakai , Leonard Rubin , Tsu-Jae King Liu

Tilted ion implantation (TII) used in conjunction with preexisting masking features on the surface of a wafer is a relatively low-cost method for sublithographic patterning. Previous demonstrations of this method utilized a thin thermally grown layer of silicon oxide (SiO2) as the implanted layer, with amorphous-silicon masking features, to form patterns with feature sizes as small as 9 nm. In this article, this method is adapted to be compatible with back-end-of-line (BEOL) processing using silicon-containing antireflection coating (SiARC) as the implanted layer, with photoresist masking features formed using deep-ultraviolet (DUV) lithography. Negative-tone patterning of an ~15-nm-thick SiARC film is achieved by implanting Ar+ ions to selectively reduce its wet etch rate, allowing for the subsequent selective removal of the SiARC material from unimplanted regions. Patterned features down to 20 nm in lateral dimension are demonstrated.

中文翻译:

使用倾斜离子注入对旋涂 SiARC 薄膜进行亚光刻图案化

倾斜离子注入 (TII) 与晶圆表面上预先存在的掩模特征结合使用是一种成本相对较低的亚光刻图案化方法。这种方法的先前演示利用氧化硅 (SiO2) 薄热生长层作为注入层,具有非晶硅掩模特征,以形成特征尺寸小至 9 nm 的图案。在本文中,该方法适用于使用含硅抗反射涂层 (SiARC) 作为注入层的生产线后端 (BEOL) 处理,并使用深紫外 (DUV) 光刻形成光刻胶掩蔽特征. 通过注入 Ar+ 离子以选择性降低其湿蚀刻速率,可实现约 15 nm 厚的 SiARC 薄膜的负色调图案化,允许随后从未植入区域选择性去除 SiARC 材料。展示了横向尺寸低至 20 nm 的图案化特征。
更新日期:2020-06-01
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