A conductivity type transformable junctionless transistor (T-JLT) is proposed. Two complementary doped, i.e., n- and p-type, polysilicon films thinner than 5 nm are arranged orthogonally with a dielectric in between, where each film plays a role as a source, a channel, a drain, and a gate, respectively. The role of the film is interchangeable by contact allocation. By swapping the contact assignment, the n- and p-type transistors attain the given device structure. This versatility reduces approximately four or two ion implantations and the associated implant-masking lithography steps compared to the conventional inversion mode or JLT technologies, respectively. For the n-FET mode with a film thickness of 5 nm and doping concentration of ${1} \times {10}^{{19}}$ /cm³, a threshold voltage of 0.42 V, a subthreshold swing of 172 mV/dec, an ON-current of $77.6~\mu \text{A}/\mu \text{m}$ , and an OFF-current of 100 fA/ $\mu \text{m}$ were obtained.

中文翻译：

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可转换无结晶体管 (T-JLT)

提出了一种导电型可变形无结晶体管（T-JLT）。两个互补掺杂的，即厚度小于 5nm 的 n 型和 p 型多晶硅薄膜正交排列，中间有电介质，其中每个薄膜分别充当源极、沟道、漏极和栅极。电影的角色可以通过联系人分配互换。通过交换触点分配，n 型和 p 型晶体管获得给定的器件结构。与传统的反转模式或 JLT 技术相比，这种多功能性分别减少了大约四个或两个离子注入和相关的注入掩蔽光刻步骤。对于薄膜厚度为 5 nm 且掺杂浓度为 ${1} \times {10}^{{19}}$ /cm ³，阈值电压为 0.42 V，亚阈值摆幅为 172 mV/dec，导通电流为 $77.6~\mu \text{A}/\mu \text{m}$ , 和 100 fA/ 的关断电流 $\mu \text{m}$ 获得了。