We investigated the performances of GaN junctionless fin-shaped field-effect transistors (FinFETs) with two different types of gate structures; overlapped- and partially covered-gate. DC, low-frequency noise (LFN), and pulsed I-V characterization measurements were performed and analyzed together in order to identify the conduction mechanism and examine both the interface and buffer traps in the devices. The fabricated GaN junctionless device with overlapped-gate structure exhibits improved DC and noise performance compared to the device with partially covered-gate, even though its gate length is much larger. The LFN behavior was found to be dominated by carrier number fluctuations (CNF). At off-state, the device with partially covered-gate exhibits generation-recombination (g-r) noise on top of 1/ ${f}$ noise. This superposition is correlated with the severe current collapse revealed by pulsed I-V measurements. In contrast, the device with overlapped-gate shows clear 1/ ${f}$ behavior without g-r noise.

中文翻译：

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栅极结构对 GaN 无结 FinFET 俘获行为的影响

我们研究了具有两种不同类型栅极结构的 GaN 无结鳍形场效应晶体管 (FinFET) 的性能；重叠和部分覆盖的门。直流、低频噪声 (LFN) 和脉冲 IV 特性测量被一起执行和分析，以识别传导机制并检查器件中的界面和缓冲陷阱。与具有部分覆盖栅极的器件相比，具有重叠栅极结构的制造的 GaN 无结器件表现出改善的直流和噪声性能，即使其栅极长度要大得多。发现 LFN 行为受载流子数量波动 (CNF) 支配。在关断状态下，具有部分覆盖栅极的器件在 1/ ${f}$ 噪音。这种叠加与脉冲 IV 测量揭示的严重电流崩塌相关。相比之下，具有重叠栅极的器件显示出清晰的 1/ ${f}$ 没有 gr 噪音的行为。