It is essential to detect the characteristic gas products of SF₆ decomposition for fault diagnosis of gas-insulated switchgear (GIS). The model of Rh doped MoS₂ was built by Materials Studio software. The micro process of three SF₆ partial dissociation products (SO₂, SOF₂, SO₂F₂) approaching the Rh–MoS₂ surface and reaching a stable state was simulated. The modification effect of Rh doped MoS₂ was studied by the key adsorption parameters such as the adsorption structure, bandgap, absorption energy, charge transfer, the total and partial density of states and electron density difference. As a result, the electrical property and chemical activity are significantly improved in comparison with the pristine MoS₂ monolayers by selecting the most stable Rh doping site. Simultaneously, it was found that Rh–MoS₂ monolayer had good selectivity and gas sensitivity to SO₂ and SOF₂ with chemical adsorption. It can also be proved by the desorption time. From the adsorption energy, the adsorption reaction of SO₂F₂ is not strong, but the transferred charge is large.

检测SF ₆分解的特征气体产物对于气体绝缘开关设备（GIS）的故障诊断至关重要。Rh掺杂MoS ₂的模型是由Materials Studio软件建立的。模拟了三种SF ₆部分离解产物（SO ₂，SOF ₂，SO ₂ F ₂）接近Rh–MoS ₂表面并达到稳定状态的微观过程。Rh掺杂的MoS ₂的改性作用通过关键的吸附参数，如吸附结构，带隙，吸收能，电荷转移，状态的总和部分密度以及电子密度差，研究了碳原子数。结果，通过选择最稳定的Rh掺杂位点，与原始的MoS ₂单层相比，电性能和化学活性得到显着改善。同时，发现Rh-MoS ₂单层具有良好的选择性和对化学吸附的SO ₂和SOF _2的气体敏感性。解吸时间也可以证明这一点。从吸附能量来看，SO ₂ F ₂的吸附反应不强，但转移的电荷较大。