Silicon-based Schottky heterojunction photodetectors are promising due to its compatibility with semiconductor process. However, the applications of these devices are usually limited to wavelength shorter than 1.1 µm due to the low absorption of electrode materials at infrared. In this report, silicon-based compound semiconductor heterojunction photodetectors with graphene transparent electrode are fabricated. Due to the high absorption of InSb at infrared, as well as the good transparency and excellent electrical conductivity of the graphene, as-prepared photodetector show broadband photoresponse with high performance which includes a specific detectivity of 1.9×1012 cm Hz1/2/W, responsivity of 132 mA/W, on/off ratio of 1×105, rise time of 2 µs, 3dB cut-off frequency of 172 KHz and response wavelength covering 635 nm, 1.55 µm and 2.7 µm. This report proved that graphene as transparent electrode has a great effect on the performance improvement of the silicon-based compound semiconductor heterojunction photodetectors.

中文翻译：

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具有石墨烯透明电极的宽带 InSb/Si 异质结光电探测器

硅基肖特基异质结光电探测器因其与半导体工艺的兼容性而很有前景。然而，由于电极材料在红外线下的吸收率低，这些器件的应用通常限于短于 1.1 µm 的波长。在本报告中，制造了具有石墨烯透明电极的硅基化合物半导体异质结光电探测器。由于 InSb 在红外波段的高吸收，以及石墨烯良好的透明性和优异的导电性，所制备的光电探测器表现出高性能的宽带光响应，包括 1.9×1012 cm Hz1/2/W 的比探测率，响应率为 132 mA/W，开/关比为 1×105，上升时间为 2 µs，3dB 截止频率为 172 KHz，响应波长覆盖 635 nm、1.55 µm 和 2.7 µm。