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InGaAs/AlAs/GaAs metamorphic asymmetric spacer layer tunnel (mASPAT) diodes for microwaves and millimeter-waves detection
Journal of Applied Physics ( IF 3.2 ) Pub Date : 2020-05-21 , DOI: 10.1063/5.0010369
A. Salhi 1 , J. Sexton 1 , S. G. Muttlak 1 , O. Abdulwahid 1 , A. Hadfield 1 , M. Missous 1
Affiliation  

We present work on a novel In0.53Ga0.47As/AlAs metamorphic asymmetric spacer layer tunnel (mASPAT) diode structure, which was grown on GaAs by solid source molecular beam epitaxy. mASPAT diodes with different mesa sizes were fabricated and tested following growth under optimal conditions. The measured I–V characteristics of these tunneling devices showed rectifying behavior resulting from the asymmetric design of the epitaxial spacer layers. The extracted curvature coefficient, junction resistance, and leakage currents at −1 V resulted in an estimated theoretical cut-off frequency f t at zero bias exceeding 180 GHz for 4 × 4 μm2 mesa devices. The obtained results demonstrate the potential use of mASPAT devices on GaAs as a low-cost alternative to devices fabricated on InP substrates for high-volume zero bias microwave and millimeter-wave detectors.

中文翻译:

用于微波和毫米波检测的 InGaAs/AlAs/GaAs 变质非对称间隔层隧道 (mASPAT) 二极管

我们介绍了一种新型 In0.53Ga0.47As/AlAs 变质非对称间隔层隧道 (mASPAT) 二极管结构,该结构通过固体源分子束外延在 GaAs 上生长。在最佳条件下生长后,制造并测试了具有不同台面尺寸的 mASPAT 二极管。这些隧道器件的测量 I-V 特性显示出由于外延间隔层的不对称设计而导致的整流行为。对于 4 × 4 μm2 台面器件,提取的曲率系数、结电阻和 -1 V 下的漏电流导致在零偏压下的估计理论截止频率 ft 超过 180 GHz。获得的结果证明了在 GaAs 上使用 mASPAT 器件作为在 InP 衬底上制造的器件的低成本替代品的潜在用途,用于大批量零偏置微波和毫米波探测器。
更新日期:2020-05-21
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