Abstract With the rapid development of nanotechnology, more and more products need to be etched on the surface of nanomaterials. Due to its own limitations, it is difficult to obtain in-depth and effective data results. In order to solve the research problem of etching law, this paper studies the surface structure etching law of self-organized nanomaterials by using AFM and SEM, and analyzes its characteristics in detail, and draws the following conclusions: through the use of AFM and SEM, the needles were coated with different forces, etching speeds, and cycles of etching to etch self-organized nanomaterials. The etching depth increased with the increase of etching force. The results show that the self-organized nanomaterials in this paper are suitable for regular etching. Processing; by changing the force parameters applied by the probe, the speed of the probe etch, and the number of cycles of the probe, the etching effect of the diamond-like film coated probe on the P-Si(100) wafer was found. As the etching force increases (1 μN-12 μN), the depth and width of the etched self-organized nanomaterial gradually increase, but as the etching force continues to increase (12 μN-20μN), the etch depth appears saturated. The etch rate has little effect on the etch depth and width.

中文翻译：

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基于AFM和SEM的自组织纳米材料表面结构蚀刻规律

摘要 随着纳米技术的飞速发展，越来越多的产品需要在纳米材料表面进行蚀刻。由于自身的局限性，难以获得深入有效的数据结果。为解决刻蚀规律的研究问题，本文利用原子力显微镜和扫描电镜研究了自组织纳米材料的表面结构刻蚀规律，并对其特点进行了详细分析，得出以下结论： ，针被涂上不同的力、蚀刻速度和蚀刻周期，以蚀刻自组织纳米材料。蚀刻深度随着蚀刻力的增加而增加。结果表明，本文的自组织纳米材料适用于常规蚀刻。加工; 通过改变探头施加的力参数，通过探针蚀刻的速度和探针的循环次数，发现了类金刚石薄膜涂层探针对P-Si(100)晶片的蚀刻效果。随着蚀刻力的增加（1 μN-12 μN），被蚀刻的自组织纳米材料的深度和宽度逐渐增加，但随着蚀刻力的继续增加（12 μN-20 μN），蚀刻深度出现饱和。蚀刻速率对蚀刻深度和宽度的影响很小。