当前位置：
X-MOL 学术
›
Microelectron. Eng.
›
论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Enhancing the synaptic properties of low-power and forming-free HfOx/TaOy/HfOx resistive switching devices
Microelectronic Engineering ( IF 2.3 ) Pub Date : 2020-05-01 , DOI: 10.1016/j.mee.2020.111358 Dionisis Sakellaropoulos , Panagiotis Bousoulas , Georgios Nikas , Christos Arvanitis , Emmanouil Bagakis , Dimitris Tsoukalas
Microelectronic Engineering ( IF 2.3 ) Pub Date : 2020-05-01 , DOI: 10.1016/j.mee.2020.111358 Dionisis Sakellaropoulos , Panagiotis Bousoulas , Georgios Nikas , Christos Arvanitis , Emmanouil Bagakis , Dimitris Tsoukalas
|
Abstract The incorporation of a TaOy layer in a HfOx/TaOy/HfOx resistive switching memory stack results in low-power (~nW in pulsing mode) and forming-free operation. With this material configuration, we derive a stable memory window (~102), good cycling variability (σ/μ
中文翻译：
增强低功率和无成型 HfOx/TaOy/HfOx 电阻开关器件的突触特性
摘要 在 HfOx/TaOy/HfOx 电阻开关存储器堆栈中加入 TaOy 层可实现低功率（脉冲模式下约为 nW）和免成型操作。通过这种材料配置，我们获得了稳定的记忆窗口（~102）、良好的循环变异性（σ/μ
更新日期：2020-05-01
中文翻译：
增强低功率和无成型 HfOx/TaOy/HfOx 电阻开关器件的突触特性
摘要 在 HfOx/TaOy/HfOx 电阻开关存储器堆栈中加入 TaOy 层可实现低功率（脉冲模式下约为 nW）和免成型操作。通过这种材料配置，我们获得了稳定的记忆窗口（~102）、良好的循环变异性（σ/μ
京公网安备 11010802027423号