Abstract This work explores a variety of dopant incorporations into the Zn13Sb10 thermoelectric material synthesized from the stoichiometric composition by slow cooling. The experimental results revealed the preference for dopant atoms that can adopt a tetrahedral coordination environment of the Zn site. Incorporations of the dopants restrict the movement of Zn atoms, as evident from the suppressed α/α’ – β phase transitions. Incorporations affect both the electrical and thermal transport properties of the material, with outcomes being specific to the dopant. For instance, doping with Ga and In (both in group 13) affects the charge carrier concentration in a different way. Also, depending on the dopants, the dominant phonon scattering pathway can either be preserved (as the Umklapp scattering) or switched to a less effective point defect scattering. The origin of the Zn deficiency in Zn13Sb10 is not electronic in nature, but thermodynamic instead.

中文翻译：

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Zn13Sb10热电材料中掺杂剂的实验研究

摘要 这项工作探索了通过缓慢冷却从化学计量组成合成的 Zn13Sb10 热电材料中掺入各种掺杂剂。实验结果揭示了可以采用Zn位点的四面体配位环境的掺杂剂原子的偏好。掺杂剂的掺入限制了 Zn 原子的运动，这从抑制的 α/α' - β 相变中可以明显看出。掺入会影响材料的电和热传输特性，其结果特定于掺杂剂。例如，掺杂 Ga 和 In（均在第 13 组中）以不同的方式影响电荷载流子浓度。此外，取决于掺杂剂，主要的声子散射路径可以保留（作为 Umklapp 散射）或切换到不太有效的点缺陷散射。Zn13Sb10 中缺锌的原因本质上不是电子的，而是热力学的。