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High Performance Approximate Memories for Image Processing Applications
Journal of Electronic Testing ( IF 0.9 ) Pub Date : 2020-05-21 , DOI: 10.1007/s10836-020-05879-0
R. Jothin , M. Peer Mohamed

Efficient utilization of on-chip Static Random Access Memory (SRAM) space is more important on processor core design in modern Field Programmable Gate Array (FPGA) based Digital Signal Processing (DSP) applications . In the proposed High-performance Approximate Single Port (HASP) SRAM architecture, a significant amount of data is stored to achieve high performance. The constraints involved with high performance are counterbalanced to provide high accuracy, high speed, low power and area efficiency. In the proposed High-performance Approximate Sub-Bank Dual Port (HASBDP1 and HASBDP2) memory architectures, HASP has been employed and modified to work as a True DP SRAM with energy and area efficiency. The performance of the proposed memories is investigated by comparing its speed, area and power with those of the existing approaches. The proposed HASP SRAM provides 14.99% less power consumption and thirteen numbers of logic elements savings in the resource utilization than the existing conventional SP SRAM. By considering the design metrics, the proposed HASBDP SRAMs outperform than the conventional TDP and sub-bank DP SRAMs approaches. The proposed HASBDP2 exhibits 29.09%, 22.37% higher PSNR and 32.94%, 28.48% higher SSIM than the truncated least significant bit and static segment on-chip approximate memories respectively.

中文翻译:

用于图像处理应用的高性能近似存储器

在现代基于现场可编程门阵列 (FPGA) 的数字信号处理 (DSP) 应用中,有效利用片上静态随机存取存储器 (SRAM) 空间对处理器内核设计更为重要。在提议的高性能近似单端口 (HASP) SRAM 架构中,存储了大量数据以实现高性能。与高性能相关的限制被抵消,以提供高精度、高速度、低功耗和面积效率。在提议的高性能近似子组双端口(HASBDP1 和 HASBDP2)存储器架构中,HASP 已被采用并修改为具有能量和面积效率的真正 DP SRAM。通过将其速度、面积和功率与现有方法进行比较,研究了所提出的存储器的性能。与现有的传统 SP SRAM 相比,所提议的 HASP SRAM 的功耗降低了 14.99%,在资源利用方面节省了 13 个逻辑元件。通过考虑设计指标,所提出的 HASBDP SRAM 优于传统的 TDP 和 sub-bank DP SRAM 方法。所提出的 HASBDP2 分别比截断的最低有效位和静态段片上近似存储器的 PSNR 高 29.09%、22.37%,SSIM 高 32.94%、28.48%。
更新日期:2020-05-21
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