As the key device in a UV warning system, a solid‐state UV photodetector has attracted great attention. Herein, a new UV photodetector structure based on vertical (Al, Ga)N nanowires with graphene electrode and Si substrate is designed and demonstrated. By graphene/vertical (Al, Ga)N nanowire array heterojunction, the rectifying characteristics of I –V curve are formed, and the dark current is 54 nA at −2 V bias. The fabricated device exhibits a responsivity of 0.176 mA W⁻¹ at the bias of −2 V, as well as a stable switching characteristic. It is proposed that the photogenerated electrons and holes can reach positive and negative electrodes by diffusion or tunneling effect, even with thick AlN sections. This method can promote the implementation of low cost for UV photodetector with adjustable detection range nowadays.

中文翻译：

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基于垂直（Al，Ga）N纳米线和石墨烯电极及硅衬底的紫外光电探测器

作为紫外线预警系统中的关键设备，固态紫外线光电探测器引起了极大的关注。本文设计并展示了一种基于垂直（Al，Ga）N纳米线，石墨烯电极和Si衬底的新型紫外光电探测器结构。通过石墨烯/垂直（Al，Ga）N纳米线阵列异质结，形成了I – V曲线的整流特性，在-2 V偏置下暗电流为54 nA。所制造的器件的响应度为0.176 mA W ^-1偏置电压为-2 V以及稳定的开关特性。有人提出，即使AlN截面较厚，光生电子和空穴也可以通过扩散或隧穿效应到达正负电极。该方法可以促进当今检测范围可调的紫外光电探测器的低成本实现。