The high‐κ polymer P(VDF‐TrFE‐CFE) is applied in the dielectric layer of a thin film transistor based on graphene, inducing a considerable overall performance improvement compared with conventional SiO₂ or ordinary polymer PMMA dielectrics. A systematical study reveals the reason for this improvement to be the strong screening effect on the Coulomb scattering in the dielectric‐semiconductor interface, which originates from the high‐κ value of P(VDF‐TrFE‐CFE). This positive effect is dominant enough to compensate for the adverse effects induced by the application of P(VDF‐TrFE‐CFE), including the large surface roughness and strong phonon scattering. A prototype transistor fabricated on a plastic substrate shows similar superior performance and sustainability upon bending operation, testifying the adaptability of P(VDF‐TrFE‐CFE) in a flexible graphene transistor. This study proposes a high‐κ polymer dielectric that is valid for high‐performing transistors based on 2D semiconductor materials.

中文翻译：

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高κ高分子电介质在石墨烯晶体管中的应用

高κ聚合物P（VDF-TrFE-CFE）应用于基于石墨烯的薄膜晶体管的介电层中，与常规SiO ₂相比，可显着提高整体性能或普通聚合物PMMA电介质。一项系统的研究表明，这种改进的原因是对电介质-半导体界面中库仑散射的强屏蔽作用，这是由于P（VDF-TrFE-CFE）的高κ值引起的。这种积极作用足以弥补因使用P（VDF-TrFE-CFE）引起的不利影响，包括较大的表面粗糙度和强烈的声子散射。在塑料基板上制造的原型晶体管在弯曲操作时表现出相似的优异性能和可持续性，证明了P（VDF-TrFE-CFE）在柔性石墨烯晶体管中的适应性。这项研究提出了一种适用于基于2D半导体材料的高性能晶体管的高κ聚合物电介质。