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Deep traps concentrations in ZnSe single crystals
Materials Science and Engineering: B ( IF 3.6 ) Pub Date : 2020-05-19 , DOI: 10.1016/j.mseb.2020.114570
M.S. Brodyn , V.Ya. Degoda , M. Alizadeh , G.P. Podust , N.Yu. Pavlova , B.V. Kozhushko

The determination of concentrations of traps and luminescence centers, even at 50% accuracy, is an important task for luminescence kinetics and a conductivity of crystalline phosphors and semiconductors. In the case of high-single crystals, ZnSe samples, there were defined the deep traps concentrations by the curves of the thermally stimulated conductivity (TSC), temperature dependencies of photoconductivity and V-I curves at 85 K and 295 K. The measured concentration values are: ~1015–1017 cm−3. It was revealed, the concentrations of traps are significantly smaller than the concentrations of recombination centers. We estimated the luminescence centers concentrations, which determine broad-luminescent-wide band with a maximum at 630 nm (1.9 eV) and revealed that their concentration exceeds 1018 cm−3.



中文翻译:

ZnSe单晶中的深阱浓度

甚至以50%的精度确定陷阱和发光中心的浓度,对于发光动力学以及晶体荧光粉和半导体的电导率来说都是一项重要的任务。对于高单晶ZnSe样品,通过热激发电导率(TSC)曲线,光电导率的温度依赖性和在85 K和295 K时的VI曲线定义了深陷阱的浓度。测得的浓度值为:〜10 15 –10 17厘米-3。结果表明,陷阱的浓度明显小于重组中心的浓度。我们估算了发光中心浓度,该浓度确定了最大630 nm(1.9 eV)处的宽发光宽带,并显示其浓度超过10 18 cm -3

更新日期:2020-05-19
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