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Capturing Waste Heat with CMOS Microelectronics
Joule ( IF 39.8 ) Pub Date : 2020-05-20 , DOI: 10.1016/j.joule.2020.05.002
Peter Bermel

Capturing waste heat as electricity using solid-state microelectronics has potential benefits for a wide variety of applications. Davids et al. recently reported a 3-terminal CMOS dual tunnel diode device demonstrating power generation up to 61 μW/cm2 at 350°C. Compared to prior rectenna designs, this design experimentally demonstrates 6,800 times higher power densities, for efficiencies around 7×10−3%. The enhancement may be attributed to improved rectification or to a shift to a thermophotovoltaic design; making this distinction clearly warrants further study. This work suggests that significant further improvements in solid state conversion efficiencies are still possible. Ultimately, this research direction may enable more economic recovery of waste heat in data centers, communications, radars, ground transportation, combined heat and power plants, and more.



中文翻译:

使用CMOS Microelectronics捕获废热

使用固态微电子将余热捕获为电能对于多种应用具有潜在的好处。Davids等。最近报道了一种三端CMOS双隧道二极管器件,该器件在350°C时的发电量高达61μW/ cm 2。与以前的整流天线设计相比,该设计在实验上证明了高6800倍的功率密度,效率约为7×10 -3%。增强可以归因于改进的整流或归因于热光电设计;做出这种区分显然值得进一步研究。这项工作表明,固态转换效率的显着进一步改善仍然是可能的。最终,该研究方向可以使数据中心,通信,雷达,地面运输,热电联产等领域的余热得到更经济的回收。

更新日期:2020-05-20
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