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Coherent epitaxial growth of superconducting NbN ultrathin films on AlN by sputtering
Applied Physics Express ( IF 2.3 ) Pub Date : 2020-05-18 , DOI: 10.35848/1882-0786/ab916e
Atsushi Kobayashi , Kohei Ueno , Hiroshi Fujioka

We investigated the structural and electrical properties of superconducting NbN films epitaxially grown on AlN single-crystalline films using a sputtering technique. The NbN(111) films grown on AlN under optimized temperatures exhibited clear peaks with Pendellösung fringes attributed to the growth of the atomically flat surfaces in 2 θ / ω X-ray diffraction patterns. Scanning transmission electron microscopy also confirmed the formation of sharp NbN/AlN interfaces. Reciprocal space mapping revealed that the NbN films were coherently grown on the AlN templates, which indicates that the NbN films have the same in-plane lattice constants as AlN. It was also determined that the shape of the unit cell of NbN depends strongly on the epitaxial growth temperature. The NbN films coherently grown on AlN exhibited superconducting transition temperatures ( T c ) ranging from 12 to 16 K, which also depends on the epitaxial growth temperature. These results indicat...

中文翻译:

通过溅射在AlN上相干外延生长NbN超薄膜

我们使用溅射技术研究了在AlN单晶膜上外延生长的超导NbN膜的结构和电学性质。在优化温度下在AlN上生长的NbN(111)膜显示出清晰的峰,其Pendellösung条纹归因于原子平面在2θ/ωX射线衍射图中的生长。扫描透射电子显微镜也证实了尖锐的NbN / AlN界面的形成。相互空间映射显示,NbN薄膜在AlN模板上相干生长,这表明NbN薄膜具有与AlN相同的面内晶格常数。还确定了NbN的晶胞的形状很大程度上取决于外延生长温度。在AlN上相干生长的NbN膜表现出12至16 K的超导转变温度(T c),这也取决于外延生长温度。这些结果表明...
更新日期:2020-05-18
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