Due to lack of analytical solutions for equation of electrical neutrality under thermal equilibrium conditions, a novel and efficient numerical iteration technique was developed. The computational carrier concentration obtained by this new numerical method is in good correlation to commonly cited values and experimental data. Based on this new numerical method effects of some factors on the resistance of silicon piezoresistive pressure sensor were analyzed. Results show that no matter doping concentration is high or low the minority carrier exclusion effect disappears under considerably high current conditions, and increases in bias current induce greater maximum operating temperature; increases in doping concentration can increase the maximum operating temperature and decrease temperature coefficient of resistance.

中文翻译：

---

载流子浓度和电阻预测的理论计算

由于缺乏在热平衡条件下的电中性方程的解析解，因此开发了一种新颖而有效的数值迭代技术。通过这种新的数值方法获得的计算载流子浓度与通常引用的值和实验数据高度相关。基于这种新的数值方法，分析了一些因素对硅压阻式压力传感器的电阻的影响。结果表明，无论掺杂浓度是高还是低，少数载流子排斥效应在相当大的电流条件下都会消失，并且偏置电流的增加会导致更高的最高工作温度。掺杂浓度的增加可以提高最高工作温度并降低电阻的温度系数。