In tungsten (W) film chemical-mechanical-planarization (CMP), the chemical and mechanical reaction behaviors of the W film surface play a critical role in the CMP performance, as determined by oxidation (i.e.,WO 3 ), corrosion (i.e., WO 4 2− ), and the electrostatic force at the interface between abrasives and the surface. Unlike a conventional catalyst (i.e., Fe(NO 3 ) 3 ) for a Fenton reaction in a CMP slurry, a new catalyst ((i.e., potassium ferric oxalate: K 3 Fe(C 2 O 4 ) 3 )) and a new nano-scale (i.e., 23 nm in diameter) abrasives (i.e., Zirconia:ZrO 2 ) provides specific CMP performance behavior: the maximum W-film polishing rate and a corrosion-free surface are achieved at a specific catalyst concentration (0.03 wt%), and the number of remaining abrasives adsorbed on the W film surface after CMP decreases with increasing concentration of the K 3 Fe(C 2 O 4

中文翻译：

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钨膜与纳米级胶体氧化锆磨料之间的界面化学和机械反应，用于化学机械平面化

在钨（W）膜化学机械平坦化（CMP）中，W膜表面的化学和机械反应行为在CMP性能中起着至关重要的作用，这取决于氧化（即WO 3），腐蚀（即WO 4 2-），以及在磨料和表面之间的界面处的静电力。与用于CMP浆料中Fenton反应的常规催化剂（即Fe（NO 3）3）不同，新催化剂（即草酸铁钾：K 3 Fe（C 2 O 4）3）和新的纳米催化剂规模（即直径23 nm）的磨料（即氧化锆：ZrO 2）具有特定的CMP性能：在特定的催化剂浓度（0.03 wt％）下可获得最大的W膜抛光速率和无腐蚀表面，