Despite the improvement of the quality of CVD grown single-layer graphene on copper substrates, transferring the two-dimensional layer without introducing any unintentional defects still poses a challenge. While many approaches focus on optimizing the transfer itself or on necessary post-transfer cleaning steps, we have focused on developing a pre-treatment of the monolayer graphene on copper to improve the quality and reproducibility of the transfer process. By pressing an ethylene-vinyl acetate copolymer foil onto the monolayer graphene on copper using a commercially available vacuum bag sealer graphene is stabilized by the attachment of functional carbon groups. As a result, we are able to transfer graphene without the need of any supporting layer in an all-H₂O wet-chemical transfer step. Despite the general belief that the crumbling of graphene without a support layer in a H₂O environment is caused due to differences in surface energy, we will show that this assumption is false and that this behavior is caused rather by the polar interactions between graphene and water. Suppressing these interactions protects graphene from ripping and results in extremely clean, highly crystalline graphene with a coverage close to 100%.

尽管改善了在铜基板上CVD生长的单层石墨烯的质量，但在不引入任何意外缺陷的情况下转移二维层仍然提出了挑战。尽管许多方法着重于优化转移本身或转移后必要的清洁步骤，但我们仍专注于开发铜上单层石墨烯的预处理以提高转移过程的质量和可重复性。通过使用市售的真空袋密封剂，将乙烯-乙酸乙烯酯共聚物箔压在铜上的单层石墨烯上，通过官能碳的连接来稳定石墨烯。结果，我们能够在全H _2中转移石墨烯而无需任何支撑层O湿化学转移步骤。尽管人们普遍认为，在H ₂ O环境中没有支撑层的石墨烯的压碎是由于表面能的差异引起的，但我们将证明该假设是错误的，并且这种行为是由石墨烯与硅之间的极性相互作用引起的。水。抑制这些相互作用可保护石墨烯免于撕裂，并产生极干净，高度结晶的石墨烯，其覆盖率接近100％。