ABSTRACT BackSide-Illuminated (BSI) CMOS Image Sensors (CISs), with developed performance on quantum efficiency and sensitivity, have been applied for aerospace missions and gradually replaced FrontSide-Illuminated (FSI) CISs. Two types of BSI CISs with different epitaxial layer thicknesses were irradiated by 14-MeV neutron up to 3.40 × 1011 n/cm2 to analyze the degradation induced by neutron irradiation. Dark current, dark current distribution, full well capacity, and spectral response were tested before and after the neutron irradiation and at different annealing time points with various temperatures. The results were analyzed to characterize the degradation introduced by the unique backside passivation layer, and the converse illuminated direction. The interface states induced by displacement damage effects at the backside passivation layer were considered as a novel origin of dark current which was not involved in FSI CISs.

中文翻译：

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背照式CMOS图像传感器中快中子引起的位移损伤效应

摘要 背照式 (BSI) CMOS 图像传感器 (CIS) 在量子效率和灵敏度方面具有发展的性能，已应用于航空航天任务并逐渐取代前照式 (FSI) CIS。用高达 3.40 × 1011 n/cm2 的 14-MeV 中子辐照具有不同外延层厚度的两种类型的 BSI CIS，以分析中子辐照引起的降解。在中子辐照前后以及不同温度的不同退火时间点测试了暗电流、暗电流分布、满阱容量和光谱响应。分析结果以表征由独特的背面钝化层和相反的照明方向引入的退化。