Organic nonvolatile memory devices based on organic field‐effect transistors (OFETs) have attracted attention as promising memory components in flexible organic integrated circuits. OFET‐based organic memories can be fabricated using solution processes with high portability and flexibility. However, many challenges still remain, such as achieving high levels of transparency and data storage while maintaining device reliability. In this study, the high‐performance of flexible organic nonvolatile memory devices is demonstrated through the synergistic effect of using a combination of polymer electret (poly(2‐vinyl naphthalene), PVN) and nanofloating gates (nickel oxide nanoparticles (NiO_x NPs)). The PVN/NiO_x NPs bilayer successfully acts as a charge storage medium with high transparency in the visible range. This system greatly improves memory performance including high data storage capacity, stable cyclic endurance, and quasi‐permanent retention characteristics (>10 years). Furthermore, these devices also show excellent charge storage characteristics after 1000 bending cycles and even under the sharply bent state (bending radius 3 mm). This enhanced mechanical stability of flexible synergistic memory devices demonstrates that NiO_x NPs can play an important role as a reliable data storage material for next‐generation wearable electronic devices.

中文翻译：

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使用氧化镍纳米浮栅和聚合物驻极体的高性能，具有出色稳定性的柔性有机非挥发性记忆体

基于有机场效应晶体管（OFET）的有机非易失性存储设备作为柔性有机集成电路中的有前途的存储组件已引起人们的关注。可以使用具有高度可移植性和灵活性的解决方案来制造基于OFET的有机存储器。但是，仍然存在许多挑战，例如在保持设备可靠性的同时实现高级别的透明度和数据存储。在这项研究中，通过结合使用聚合物驻极体（聚（2-乙烯基萘），PVN）和纳米浮栅（氧化镍纳米颗粒（NiO _x NPs））的协同效应，证明了柔性有机非易失性存储器件的高性能。）。PVN / NiO _x NPs双层成功地用作电荷存储介质，在可见光范围内具有高透明度。该系统极大地提高了存储性能，包括高数据存储容量，稳定的循环耐久性和准永久性保留特性（> 10年）。此外，这些器件在经过1000次弯曲循环后甚至在急剧弯曲的状态下（弯曲半径3 mm）也显示出优异的电荷存储特性。柔性协同存储设备增强的机械稳定性表明，NiO _x NPs可以作为下一代可穿戴电子设备的可靠数据存储材料发挥重要作用。