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Enhanced photoluminescence of DCJTB with ordered Ag-SiO2 core–shell nanostructures via nanosphere lithography
Results in Physics ( IF 5.3 ) Pub Date : 2020-05-18 , DOI: 10.1016/j.rinp.2020.103168
Yuan-Fong Chou Chau , Chieh-Jen Lin , Tsung Sheng Kao , Ya-Chih Wang , Chee Ming Lim , N.T.R.N. Kumara , Hai-Pang Chiang

We have fabricated Ag-SiO2 core–shell nanostructure set in the hexagonally ordered Ag nanohole array by nanosphere lithography with reactive ion etching, and followed by Ag deposition. The resulting nanostructure includes the triangular-shaped plates with sharp edges on the top, the Ag-SiO2 core–shell nanospheres, the hexagonally arranged nanohole array, a SiO2 buffer layer and a DCJTB (4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran) fluorescent dye layer, respectively. Six patterns of substrates (i.e., Types 1–6) were fabricated and their photoluminescence enhancement performance was compared to substrate layered with pure DCJTB. The experimental results show that photoluminescence enhancement can be 15.69 times, and the lifetime can be shortened from 0.97 ns to 0.41 ns for Type 3 when compared to the pure DCJTB one. The finite element method revealed four structure conditions which are the effects of edge enhancement, gap plasmon resonance, hollow plasmon resonance, and core–shell hybridization plasmon resonance and can contribute to the photoluminescence enhancement factor. The proposed substrates provide a practical detecting platform with plasmon-enhanced photoluminescence, and the fabrication methods used are technically simple and low cost.



中文翻译:

通过纳米球光刻技术,增强了DCJTB的有序Ag-SiO 2核-壳纳米结构的光致发光

我们通过反应离子蚀刻的纳米球光刻技术,在六角形有序的Ag纳米孔阵列中设置了Ag-SiO 2核壳纳米结构,然后进行了Ag沉积。最终的纳米结构包括顶部具有尖锐边缘的三角形板,Ag-SiO 2核-壳纳米球,六边形排列的纳米孔阵列,SiO 2缓冲层和DCJTB(4-(二氰基亚甲基)-2-叔丁基-6-((1,1,7,7-四甲基聚氯吡啶基-9-烯基)-4H-吡喃)荧光染料层)。制作了六种基板图案(即1-6型),并将它们的光致发光增强性能与纯DCJTB层叠的基板进行了比较。实验结果表明,与纯DCJTB相比,Type 3的光致发光强度提高了15.69倍,寿命从0.97 ns缩短至0.41 ns。有限元方法揭示了四个结构条件,这些条件是边缘增强,间隙等离子体激元共振,中空等离子体激元共振和核-壳杂交等离子体激元共振的影响,并且可以有助于光致发光增强因子。

更新日期:2020-05-18
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