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Evaluation of acoustoelectric UV sensor according to ZnO thin film properties
Current Applied Physics ( IF 2.4 ) Pub Date : 2020-07-01 , DOI: 10.1016/j.cap.2020.05.004
Mun-Bae Jeon , Yeon Hwa Kwak , Kunnyun Kim

Abstract This paper presents an improvement of the acoustoelectric effect by sensitivity and response of ultraviolet (UV) sensors by changing the argon/oxygen ratio. The acoustoelectric sensor is a delay-line type with a center frequency of 240.2625 MHz and fabricated on a piezoelectric substrate. Aluminum thin films were deposited as interdigitated transducers and patterned, and the ZnO thin film was deposited as a UV sensing layer by controlling the ratio of argon and oxygen with an RF magnetron sputtering. By increasing the oxygen partial pressure during ZnO deposition, the photoconductivity increased by 6.5 times, thereby increasing the frequency change related to the sensitivity of the sensor. The sensitivity to UV light was 110.4 Hz cm2/μW under an argon/oxygen ratio of 6:4, which is an increase of 5.1 times from 21.76 Hz cm2/μW obtained under a ratio of 10:2. In addition, the response and recovery times were improved by 2.85 times and 3.02 times, respectively.

中文翻译:

根据 ZnO 薄膜特性评估声电紫外传感器

摘要 本文介绍了通过改变氩/氧比来改善紫外 (UV) 传感器的灵敏度和响应的声电效应。声电传感器是延迟线型,中心频率为 240.2625 MHz,制作在压电基板上。铝薄膜沉积为叉指换能器并图案化,ZnO 薄膜沉积为 UV 传感层,通过射频磁控溅射控制氩气和氧气的比例。通过在 ZnO 沉积过程中增加氧分压,光电导率增加了 6.5 倍,从而增加了与传感器灵敏度相关的频率变化。在氩氧比为 6:4 的条件下,对紫外光的灵敏度为 110.4 Hz cm2/μW,比 21 提高了 5.1 倍。在 10:2 的比率下获得 76 Hz cm2/μW。此外,响应时间和恢复时间分别提高了 2.85 倍和 3.02 倍。
更新日期:2020-07-01
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